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SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1097
DESCRIPTION *With TO-220F package *Low collector saturation voltage *Complement to type 2SD1588 APPLICATIONS *For low frequency power amplifier and low speed switching applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 30 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -80 -60 -5 -7 2.0 W UNIT V V V A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-30mA; IB=0 IC=-1mA; IE=0 IE=-1mA; IC=0 IC=-5A ;IB=-0.5A IC=-5A ;IB=-0.5A VCB=-60V; IE=0 VEB=-5V; IC=0 IC=-3A ; VCE=-1V 40 MIN -60 -80 -5
2SB1097
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE
TYP.
MAX
UNIT V V V
-0.5 -1.5 -10 -10 200
V V A A
hFE Classifications M 40-80 L 60-120 K 100-200
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1097
Fig.2 Outline dimensions
3

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